期刊
SEMICONDUCTOR SCIENCE AND TECHNOLOGY
卷 25, 期 4, 页码 -出版社
IOP Publishing Ltd
DOI: 10.1088/0268-1242/25/4/045020
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- National Science Council of Taiwan, Republic of China [NSC-96-2221-E-006-282-MY3]
In this work, a bias-assisted photoelectrochemical (PEC) oxidation method was used to form an oxide insulator for GaN-based p-type metal-oxide-semiconductor (MOS) devices. The inversion breakdown and accumulation breakdown fields of the resulting GaN p-type MOS devices were 11.6 MV cm(-1) and 3.7 MV cm(-1), respectively. The interface-state density of the GaN p-type MOS devices was 4.18 x 10(11) cm(-2) eV(-1) obtained by a photo-assisted capacitance-voltage measurement method. In addition, the negative fixed oxide charge of 2.4 x 10(12) cm(-2) eV(-1) was also estimated.
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