相关参考文献
注意：仅列出部分参考文献，下载原文获取全部文献信息。Heteroepitaxial growth of GaAs on (100) Ge/Si using migration enhanced epitaxy
H. Tanoto et al.
JOURNAL OF APPLIED PHYSICS (2008)
Reduced pressure chemical vapor deposition of Ge thick layers on Si(001), Si(011) and Si(111)
J. M. Hartmann et al.
JOURNAL OF CRYSTAL GROWTH (2008)
Molecular beam epitaxy growth of metamorphic high electron mobility transistors and metamorphic heterojunction bipolar transistors on Ge and Ge-on-insulator/Si substrates
D. Lubyshev et al.
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B (2008)
105 nm Gate length pMOSFETs with high-K and metal gate fabricated in a Si process line on 200 mm GeOI wafers
C. Le Royer et al.
SOLID-STATE ELECTRONICS (2008)
Stranski-Krastanow growth of tensile strained Si islands on Ge(001)
D. Pachinger et al.
APPLIED PHYSICS LETTERS (2007)
Experimental and theoretical study of Ge surface passivation
M. Houssa et al.
MICROELECTRONIC ENGINEERING (2007)
High speed and high responsivity germanium photodetector integrated in a Silicon-on-insulator microwaveguide
Laurent Vivien et al.
OPTICS EXPRESS (2007)
Quantitative local strain measurements in compressive strained Ge/tensile strained Si bi-layers grown on top of relaxed Si0.5Ge0.5 virtual substrates
N. Cherkashin et al.
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS (2006)
Thin epitaxial Si films as a passivation method for Ge(100): Influence of deposition temperature on Ge surface segregation and the high-k/Ge interface quality
F. E. Leys et al.
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING (2006)
Monolithic integration of AlGaInP laser diodes on SiGe/Si substrates by molecular beam epitaxy
O. Kwon et al.
JOURNAL OF APPLIED PHYSICS (2006)
High-temperature growth of very high germanium content SiGe virtual substrates
Y Bogumilowicz et al.
JOURNAL OF CRYSTAL GROWTH (2006)
Growth of GaAs on vicinal Ge surface using low-temperature migration-enhanced epitaxy
H Tanoto et al.
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B (2006)
SiGe virtual substrates growth up to 50% Ge concentration for Si/Ge dual channel epitaxy
Y Bogumilowicz et al.
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY (2005)
Ultrahigh speed germanium-on-silicon-on-insulator photodetectors for 1.31 and 1.55 μm operation -: art. no. 231109
M Rouvière et al.
APPLIED PHYSICS LETTERS (2005)
Agglomeration control during the selective epitaxial growth of Si raised sources and drains on ultra-thin silicon-on-insulator substrates
C Jahan et al.
JOURNAL OF CRYSTAL GROWTH (2005)
Impact of dislocation densities on n+/p and p+/n junction GaAs diodes and solar cells on SiGe virtual substrates -: art. no. 014502
CL Andre et al.
JOURNAL OF APPLIED PHYSICS (2005)
Reduced pressure-chemical vapor deposition of intrinsic and doped Ge layers on Si(001) for microelectronics and optoelectronics purposes
JM Hartmann et al.
JOURNAL OF CRYSTAL GROWTH (2005)
Direct growth of GaAs-based structures on exactly (001)-oriented Ge/Si virtual substrates: reduction of the structural defect density and observation of electroluminescence at room temperature under CW electrical injection
Y Chriqui et al.
JOURNAL OF CRYSTAL GROWTH (2004)
Selective epitaxial growth of boron- and phosphorus-doped Si and SiGe for raised sources and drains
JM Hartmann et al.
JOURNAL OF CRYSTAL GROWTH (2004)
Growth of strained Si and strained Ge heterostructures on relaxed Si1-xGex by ultrahigh vacuum chemical vapor deposition
ML Lee et al.
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B (2004)
Reduced pressure-chemical vapor deposition of Ge thick layers on Si(001) for 1.3-1.55-μm photodetection
JM Hartmann et al.
JOURNAL OF APPLIED PHYSICS (2004)
Structural characterization of thick, high-quality epitaxial Ge on Si substrates grown by low-energy plasma-enhanced chemical vapor deposition
SG Thomas et al.
JOURNAL OF ELECTRONIC MATERIALS (2003)
Si based optoelectronics for communications
G Masini et al.
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY (2002)
SiGe growth kinetics and doping in reduced pressure-chemical vapor deposition
JM Hartmann et al.
JOURNAL OF CRYSTAL GROWTH (2002)
分享论文
