Physical properties of Bi2Te3 and Sb2Te3 films deposited by close space vapor transport

Near-stoichiometric bismuth telluride (Bi2Te3) and antimony telluride (Sb2Te3) films were grown by the close space vapor transport (CSVT) method in a relatively simple fashion. The dependence of the film properties on the substrate temperature was explored over a wide range by keeping the source-to-substrate thermal gradient fixed at 300 degrees C and 350 degrees C for the Bi2Te3 and Sb2Te3 film growth, respectively. A Seebeck coefficient (alpha) of 255 mu V K-1 and a power factor of 20.5 x 10(-4) W K-2 m(-1) were obtained for Bi2Te3 at a substrate temperature of 350 degrees C; meanwhile, the maxima of the above parameters for the antimony telluride films (108 mu V K-1 and 3.8 x 10(-4) W K-2 m(-1), respectively) were reached at a substrate temperature of 450 degrees C.