期刊
SEMICONDUCTOR SCIENCE AND TECHNOLOGY
卷 23, 期 2, 页码 -出版社
IOP PUBLISHING LTD
DOI: 10.1088/0268-1242/23/2/025014
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ZnO film was grown on a heavily phosphor-doped n(+)-Si substrate by metal-organic chemical vapor deposition technology. X-ray photoelectron spectroscopy measurements indicate that a two-layer structure, comprised of a phosphor-doped ZnO layer and an un-doped ZnO layer, was formed during the diffusion process of phosphor from the n(+)-Si substrate. The current-voltage characteristic exhibited significant rectifying behavior with low-leakage current for this device. The distinct defect-related blue-white electroluminescence was observed, the origin of which was confirmed to be from the ZnO p-n homojunction.
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