a-Type edge dislocation mobility in wurtzite GaN using molecular dynamics

Classical molecular dynamics simulations of wurtzite gallium nitride are performed to calculate the velocities of the three types of a-type edge dislocations at 1300 K. Slips in the basal, prismatic and pyramidal planes are studied, and the anisotropic glide mechanisms are examined at both low and high stresses. The structures of the dislocation cores are described and the mechanisms of dislocation glide are discussed in the context of their potential motion in thin film growth. Published by Elsevier Ltd. on behalf of Acta Materialia Inc.