期刊
SCRIPTA MATERIALIA
卷 65, 期 4, 页码 320-322出版社
PERGAMON-ELSEVIER SCIENCE LTD
DOI: 10.1016/j.scriptamat.2011.04.040
关键词
Wafer bonding; Nanoadhesion; Room temperature; Silicon nitride; SiO2
类别
资金
- Institute for Advanced Micro-system Integration (IMSI) consortium
- TAIYO YUDEN Co. Ltd.
An SiO2-SiN wafer was produced using an Si nanoadhesion layer at room temperature. The two surfaces were cleaned by Ar ion beam activation and deposited with an Si nanoadhesion layer. Using such a layer, strong and tight bonding between SiO2 and SiN wafers was obtained without heat treatment. Transmission electron microscopy revealed that the SiO2-SiO2 interface was tightly bonded and is defect free. Moreover, the formation of an amorphous Fe-doped Si layer across the interface was found to enhance SiO2 wafer bonding. In addition, the Fe-Si amorphous layer was shown to have a resistance of 5 k Omega cm(-1). (C) 2011 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据