Si nanoadhesion layer for enhanced SiO2-SiN wafer bonding

An SiO2-SiN wafer was produced using an Si nanoadhesion layer at room temperature. The two surfaces were cleaned by Ar ion beam activation and deposited with an Si nanoadhesion layer. Using such a layer, strong and tight bonding between SiO2 and SiN wafers was obtained without heat treatment. Transmission electron microscopy revealed that the SiO2-SiO2 interface was tightly bonded and is defect free. Moreover, the formation of an amorphous Fe-doped Si layer across the interface was found to enhance SiO2 wafer bonding. In addition, the Fe-Si amorphous layer was shown to have a resistance of 5 k Omega cm(-1). (C) 2011 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.