Nitrogen incorporated GeTe phase change thin film for high-temperature data retention and low-power application

The crystallization temperature of GeTe film increases markedly from 187 to 372 degrees C as a result of 9.81 at.% nitrogen doping, and a rhombohedral-rocksalt phase transition is observed in both GeTe and nitrogen-doped GeTe (GeTeN) films. Up to 10(5) cycles of endurance for phase change memory (PCM) cells based on GeTeN have been achieved. Extrafine data retention (10 years at 241 degrees C) and relatively low power consumption suggest GeTeN as a promising alternative material to improve the performance of PCM. (C) 2011 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.