期刊
SCIENTIFIC REPORTS
卷 5, 期 -, 页码 -出版社
NATURE PUBLISHING GROUP
DOI: 10.1038/srep14092
关键词
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资金
- National Natural Science Foundation of China [61504083, 51371120, 51302174, 61306126, 21104045]
- Science and Technology Foundation of Shenzhen [JCYJ20140418095735601]
- Science and Technology Commission of Shanghai Municipality [12ZR1453000]
- Nanshan District Key Lab for Biopolymer and Safety Evaluation [KC2014ZDZJ0001A]
- National Science Foundation of Shenzhen University [201501]
- Natural Science Foundation of Shenzhen University [000062]
- Special Research Foundation of Shenzhen Oversea High-level Talents for Innovation and Entrepreneurship [KQCX20120807153115869]
Effect of a polarized P(VDF-TrFE) ferroelectric polymer gating on AlGaN/GaN metal-oxide-semiconductor high-electron-mobility transistors (MOS-HEMTs) was investigated. The P(VDF-TrFE) gating in the source/drain access regions of AlGaN/GaN MOS-HEMTs was positively polarized (i.e., partially positively charged hydrogen were aligned to the AlGaN surface) by an applied electric field, resulting in a shift-down of the conduction band at the AlGaN/GaN interface. This increases the 2-dimensional electron gas (2-DEG) density in the source/drain access region of the AlGaN/GaN heterostructure, and thereby reduces the source/drain series resistance. Detailed material characterization of the P(VDF-TrFE) ferroelectric film was also carried out using the atomic force microscopy (AFM), X-ray Diffraction (XRD), and ferroelectric hysteresis loop measurement.
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