Penetration depth at various Raman excitation wavelengths and stress model for Raman spectrum in biaxially-strained Si

The carrier mobility of Si material can be enhanced under strain, and the stress magnitude can be measured by the Raman spectrum. In this paper, we aim to study the penetration depths into biaxially-strained Si materials at various Raman excitation wavelengths and the stress model corresponding to Raman spectrum in biaxially-strained Si. The experimental results show that it is best to use 325 nm excitation to measure the material stress in the top strained Si layer, and that one must pay attention to the distortion of the buffer layers on measuring results while 514 nm excitation is also measurable. Moreover, we established the stress model for Raman spectrum of biaxially-strained Si based on the Secular equation. One can obtain the stress magnitude in biaxially-strained Si by the model, as long as the results of the Raman spectrum are given. Our quantitative results can provide valuable references for stress analysis on strained materials.