期刊
SCIENCE AND TECHNOLOGY OF ADVANCED MATERIALS
卷 15, 期 1, 页码 -出版社
TAYLOR & FRANCIS LTD
DOI: 10.1088/1468-6996/15/1/014207
关键词
silicon; quantum dots; quantum size effect; surface chemistry; photoluminescence; nanocrystals
资金
- Grants-in-Aid for Scientific Research [26390024, 23655138] Funding Source: KAKEN
This review describes a series of representative synthesis processes, which have been developed in the last two decades to prepare silicon quantum dots (QDs). The methods include both top-down and bottom-up approaches, and their methodological advantages and disadvantages are presented. Considerable efforts in surface functionalization of QDs have categorized it into (i) a two-step process and (ii) in situ surface derivatization. Photophysical properties of QDs are summarized to highlight the continuous tuning of photoluminescence color from the near-UV through visible to the near-IR range. The emission features strongly depend on the silicon nanostructures including QD surface configurations. Possible mechanisms of photoluminescence have been summarized to ascertain the future challenges toward industrial use of silicon-based light emitters.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据