期刊
SCIENCE
卷 344, 期 6181, 页码 286-289出版社
AMER ASSOC ADVANCEMENT SCIENCE
DOI: 10.1126/science.1252268
关键词
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资金
- National Research Foundation of Korea (NRF)
- Korean government (Ministry of Science, ICT, and Future Planning) [2007-0054845]
- Basic Science Research Program through the NRF [2009-0083540]
- Samsung-SKKU graphene center
- National Research Foundation of Korea [2007-0054845, 2012R1A1A2041241] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
The uniform growth of single-crystal graphene over wafer-scale areas remains a challenge in the commercial-level manufacturability of various electronic, photonic, mechanical, and other devices based on graphene. Here, we describe wafer-scale growth of wrinkle-free single-crystal monolayer graphene on silicon wafer using a hydrogen-terminated germanium buffer layer. The anisotropic twofold symmetry of the germanium (110) surface allowed unidirectional alignment of multiple seeds, which were merged to uniform single-crystal graphene with predefined orientation. Furthermore, the weak interaction between graphene and underlying hydrogen-terminated germanium surface enabled the facile etch-free dry transfer of graphene and the recycling of the germanium substrate for continual graphene growth.
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