期刊
SCIENCE
卷 343, 期 6167, 页码 163-167出版社
AMER ASSOC ADVANCEMENT SCIENCE
DOI: 10.1126/science.1246137
关键词
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资金
- NSF [ECCS-1231808]
- Defense Advanced Research Projects Agency
- National Secretariat of Higher Education, Science, Technology and Innovation of Ecuador (SENESCYT)
- Scientific User Facilities Division, Office of Basic Energy Sciences, U.S. Department of Energy
- Office of Basic Energy Sciences, Division of Materials and Engineering Sciences, U.S. Department of Energy [DE-AC04-94AL85000]
- Directorate For Engineering
- Div Of Electrical, Commun & Cyber Sys [1231808] Funding Source: National Science Foundation
By adapting the concept of epitaxy to two-dimensional space, we show the growth of a single-atomic-layer, in-plane heterostructure of a prototypical material system-graphene and hexagonal boron nitride (h-BN). Monolayer crystalline h-BN grew from fresh edges of monolayer graphene with atomic lattice coherence, forming an abrupt one-dimensional interface, or boundary. More important, the h-BN lattice orientation is solely determined by the graphene, forgoing configurations favored by the supporting copper substrate.
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