期刊
SCIENCE
卷 342, 期 6165, 页码 1490-1493出版社
AMER ASSOC ADVANCEMENT SCIENCE
DOI: 10.1126/science.1242247
关键词
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资金
- Funding Program for World-Leading Innovative Research and Development on Science and Technology (FIRST Program), Japan
- U.S. Department of Energy, Office of Basic Energy Sciences, Materials Sciences and Engineering Division [DE-AC02-76SF00515]
- Ministry of Education, Culture, Sports, Science and Technology, Japan [23340096, 24224009]
- Grants-in-Aid for Scientific Research [23340096, 25800187] Funding Source: KAKEN
The motion of electrons in a solid has a profound effect on its topological properties and may result in a nonzero Berry's phase, a geometric quantum phase encoded in the system's electronic wave function. Despite its ubiquity, there are few experimental observations of Berry's phase of bulk states. Here, we report detection of a nontrivial pi Berry's phase in the bulk Rashba semiconductor BiTeI via analysis of the Shubnikov-de Haas (SdH) effect. The extremely large Rashba splitting in this material enables the separation of SdH oscillations, stemming from the spin-split inner and outer Fermi surfaces. For both Fermi surfaces, we observe a systematic pi-phase shift in SdH oscillations, consistent with the theoretically predicted nontrivial pi Berry's phase in Rashba systems.
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