Low-temperature fabrication of high performance indium oxide thin film transistors

In this study, indium oxide (In2O3) thin-film transistors (TFTs) were fabricated by a solution-process at low temperature. A single precursor in a single solvent system was used as the In2O3 precursor to minimize the carbon-based impurities. The 300 degrees C-annealed In2O3 TFT with channel thickness of 12 nm exhibits enhanced performance, which shows saturation mobility (mu(sat)) of 3.08 cm(2) V-1 s(-1), an on/off current ratio (I-on/I-off) of 1.04 x 10(8), a threshold voltage (V-T) of 12.7 V, and a subthreshold swing (SS) of 1.49 V per decade. Finally, high-performance In2O3 TFT based on solution-processed zirconium oxide dielectric was realized, which shows distinguished electrical performance (mu(sat) = 13.01 cm(2) V-1 s(-1), I-on/I-off = 1.09 x 10(7), V-T = 1.2 V, and SS = 0.1 V per decade). These results suggest that solution-processed In2O3 TFTs could potentially be used for low-cost, low-temperature, and high-performance electronic devices.