期刊
RSC ADVANCES
卷 5, 期 44, 页码 35046-35051出版社
ROYAL SOC CHEMISTRY
DOI: 10.1039/c5ra03352g
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资金
- University grant commission UGC-CSIR (UGC-JRF)
An ultra thin film (similar to 5 nm) high-k Hafnium oxide dielectric, grown on a doped p-Si(100) substrate by the atomic layer deposition technique has been investigated for resistive and capacitive switching with and without illumination of light. As grown samples illustrate small non-switching leakage current under high applied electric fields and probe frequencies and trap charge assisted counter-clockwise capacitance-voltage behavior. A unique resistance switching was observed under illumination of 15-60 mW light. In the first cycle, the light assisted switching provide a 10(4) : 1 resistance ratio, which diminishes in the next cycle onward, which may be due to irreversible charge injection in the oxide layers. The band offset and band match-up energy diagram for the charge carriers responsible for resistive switching and charge trapping near the interface have been demonstrated under the application of a bias electric field and light.
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