期刊
SCIENCE
卷 341, 期 6146, 页码 640-643出版社
AMER ASSOC ADVANCEMENT SCIENCE
DOI: 10.1126/science.1240961
关键词
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资金
- National Natural Science Foundation of China [61176074]
- National Science and Technology Major Project of China [2009ZX02039-003]
- Key Technologies Research and Development Program of Jiangsu Province [BE2009055, SISPARK]
As the semiconductor devices of integrated circuits approach the physical limitations of scaling, alternative transistor and memory designs are needed to achieve improvements in speed, density, and power consumption. We report on a transistor that uses an embedded tunneling field-effect transistor for charging and discharging the semi-floating gate. This transistor operates at low voltages (<= 2.0 volts), with a large threshold voltage window of 3.1 volts, and can achieve ultra-high-speed writing operations (on time scales of similar to 1 nanosecond). A linear dependence of drain current on light intensity was observed when the transistor was exposed to light, so possible applications include image sensing with high density and performance.
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