期刊
SCIENCE
卷 336, 期 6081, 页码 555-558出版社
AMER ASSOC ADVANCEMENT SCIENCE
DOI: 10.1126/science.1218197
关键词
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资金
- Army Research Office
- Defense Advanced Research Projects Agency
- Office of Naval Research
- NSF/Materials Research Science and Engineering Center through the Cornell Center for Materials Research (CCMR) [DMR-1120296]
- NSF/Nanoscale Science and Engineering Center through the Cornell Center for Nanoscale Systems
- NSF
- Div Of Electrical, Commun & Cyber Sys
- Directorate For Engineering [0922836] Funding Source: National Science Foundation
Spin currents can apply useful torques in spintronic devices. The spin Hall effect has been proposed as a source of spin current, but its modest strength has limited its usefulness. We report a giant spin Hall effect (SHE) in beta-tantalum that generates spin currents intense enough to induce efficient spin-torque switching of ferromagnets at room temperature. We quantify this SHE by three independent methods and demonstrate spin-torque switching of both out-of-plane and in-plane magnetized layers. We furthermore implement a three-terminal device that uses current passing through a tantalum-ferromagnet bilayer to switch a nanomagnet, with a magnetic tunnel junction for read-out. This simple, reliable, and efficient design may eliminate the main obstacles to the development of magnetic memory and nonvolatile spin logic technologies.
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