期刊
SCIENCE
卷 332, 期 6035, 页码 1294-1297出版社
AMER ASSOC ADVANCEMENT SCIENCE
DOI: 10.1126/science.1204428
关键词
-
资金
- Defense Advanced Research Projects Agency (DARPA) [FA8650-08-C-7838]
A wafer-scale graphene circuit was demonstrated in which all circuit components, including graphene field-effect transistor and inductors, were monolithically integrated on a single silicon carbide wafer. The integrated circuit operates as a broadband radio-frequency mixer at frequencies up to 10 gigahertz. These graphene circuits exhibit outstanding thermal stability with little reduction in performance (less than 1 decibel) between 300 and 400 kelvin. These results open up possibilities of achieving practical graphene technology with more complex functionality and performance.
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