期刊
SCIENCE
卷 333, 期 6045, 页码 999-1003出版社
AMER ASSOC ADVANCEMENT SCIENCE
DOI: 10.1126/science.1208759
关键词
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资金
- U.S. Department of Energy (DOE), Office of Science, Office of Basic Energy Sciences [DE_SC0001085]
- Air Force Office of Scientific Research [FA9550-11-1-0010]
- DOE [DE-FG02-88ER13937, DE-FG02-07ER15842, DE-AC02-98CH10886]
- Office of Naval Research under Graphene Multidisciplinary University Research Initiative
- Defense Advanced Research Projects Agency
- NSF [CHE-0641523, CHE-07-01483]
- New York State Office of Science, Technology and Academic Research
- Ministry of Education, Science and Technology [2011-0018395]
- National Research Foundation of Korea [2010-0020207] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
- U.S. Department of Energy (DOE) [DE-FG02-88ER13937] Funding Source: U.S. Department of Energy (DOE)
In monolayer graphene, substitutional doping during growth can be used to alter its electronic properties. We used scanning tunneling microscopy, Raman spectroscopy, x-ray spectroscopy, and first principles calculations to characterize individual nitrogen dopants in monolayer graphene grown on a copper substrate. Individual nitrogen atoms were incorporated as graphitic dopants, and a fraction of the extra electron on each nitrogen atom was delocalized into the graphene lattice. The electronic structure of nitrogen-doped graphene was strongly modified only within a few lattice spacings of the site of the nitrogen dopant. These findings show that chemical doping is a promising route to achieving high-quality graphene films with a large carrier concentration.
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