期刊
SCIENCE
卷 329, 期 5997, 页码 1316-1318出版社
AMER ASSOC ADVANCEMENT SCIENCE
DOI: 10.1126/science.1192511
关键词
-
资金
- Defense Advanced Research Projects Agency Microsystem Technology Office [N66001-07-1-2031]
Logic circuits capable of operating at high temperatures can alleviate expensive heat-sinking and thermal-management requirements of modern electronics and are enabling for advanced propulsion systems. Replacing existing complementary metal-oxide semiconductor field-effect transistors with silicon carbide (SiC) nanoelectromechanical system (NEMS) switches is a promising approach for low-power, high-performance logic operation at temperatures higher than 300 degrees C, beyond the capability of conventional silicon technology. These switches are capable of achieving virtually zero off-state current, microwave operating frequencies, radiation hardness, and nanoscale dimensions. Here, we report a microfabricated electromechanical inverter with SiC complementary NEMS switches capable of operating at 500 degrees C with ultralow leakage current.
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