期刊
SCIENCE
卷 324, 期 5928, 页码 768-771出版社
AMER ASSOC ADVANCEMENT SCIENCE
DOI: 10.1126/science.1170335
关键词
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资金
- Microelectronics Advanced Research Corporation Materials, Structures, and Devices Focus Center
- Intel
- Office of Naval Research (ONR).
- NSF
- U.S. Department of Energy [DE-AC52-07NA27344]
- Div Of Electrical, Commun & Cyber Sys
- Directorate For Engineering [0846563] Funding Source: National Science Foundation
Graphene is readily p-doped by adsorbates, but for device applications, it would be useful to access the n-doped material. Individual graphene nanoribbons were covalently functionalized by nitrogen species through high-power electrical joule heating in ammonia gas, leading to n-type electronic doping consistent with theory. The formation of the carbon-nitrogen bond should occur mostly at the edges of graphene where chemical reactivity is high. X-ray photoelectron spectroscopy and nanometer-scale secondary ion mass spectroscopy confirm the carbon-nitrogen species in graphene thermally annealed in ammonia. We fabricated an n-type graphene field-effect transistor that operates at room temperature.
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