4.8 Article

Complex patterning by vertical interchange atom manipulation using atomic force microscopy

期刊

SCIENCE
卷 322, 期 5900, 页码 413-417

出版社

AMER ASSOC ADVANCEMENT SCIENCE
DOI: 10.1126/science.1160601

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资金

  1. Ministry of Education, Culture, Sports, Science and Technology (MEXT)
  2. JST
  3. Handai Frontier Research Center
  4. Global Center of Excellence program Center for Electronic Devices Innovation
  5. Air Force Office of Scientific Research-Asian Office of Aerospace Research and Development
  6. Frontier Research Base for Global Young Researchers
  7. Ministerio de Educacion y Ciencia (Spain)
  8. Grantova Agentura Akademie Ved (Czech Republic)
  9. Grants-in-Aid for Scientific Research [19053006] Funding Source: KAKEN

向作者/读者索取更多资源

The ability to incorporate individual atoms in a surface following predetermined arrangements may bring future atom-based technological enterprises closer to reality. Here, we report the assembling of complex atomic patterns at room temperature by the vertical interchange of atoms between the tip apex of an atomic force microscope and a semiconductor surface. At variance with previous methods, these manipulations were produced by exploring the repulsive part of the short-range chemical interaction between the closest tip-surface atoms. By using first-principles calculations, we clarified the basic mechanisms behind the vertical interchange of atoms, characterizing the key atomistic processes involved and estimating the magnitude of the energy barriers between the relevant atomic configurations that leads to these manipulations.

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