Temperature stress on a thin film transistor with a novel BaZnSnO semiconductor using a solution process

We have fabricated novel BaZnSnO-TFT using a solution process and investigated the electrical performance and temperature stability. BaZnSnO-TFT shows an improved field-effect mobility of 3.2 cm(2) V-1 s(-1), a subthreshold swing of 0.61 V per decade and an on/off current ratio of 2 x 10(7) compared to those of ZnSnO-TFT. Density of state distribution of BaZnSnO and ZnSnO semiconductor has been extracted from electrical measurements. BaZnSnO-TFT shows an improved electrical performance and temperature stability due to smaller oxygen vacancies, less bulk trap density and interface state density.