4.6 Article

Ba2GeS4 and Mg2SnS4: synthesis, structures, optical properties and electronic structures

期刊

RSC ADVANCES
卷 5, 期 42, 页码 33646-33652

出版社

ROYAL SOC CHEMISTRY
DOI: 10.1039/c5ra00264h

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资金

  1. Xinjiang Program of Cultivation of Young Innovative Technical Talents [2014731029]
  2. Western Light Foundation of Chinese Academy of Sciences [XBBS201318]
  3. National Natural Science Foundation of China [51402352, 51425206, U1129301, 51172277]
  4. 973 Program of China [2014CB648400]
  5. Funds for Creative Cross & Cooperation Teams of CAS
  6. Xinjiang International Science & Technology Cooperation Program [20146001]
  7. Major Program of Xinjiang Uygur Autonomous Region of China [201130111]

向作者/读者索取更多资源

Two ternary metal chalcogenides, Ba2GeS4 and Mg2SnS4, have been synthesized by a high-temperature solid-state reaction. Single-crystal X-ray diffraction analysis reveals that they crystallize in the same space group Pnma with a three-dimensional framework composed of discrete MS4 (M = Ge and Sn) tetrahedra, but they are not isostructural. The arrangements of isolated MS4 (M = Ge and Sn) units are obviously different in the Ba2GeS4 and Mg2SnS4 structures - they have their a and c axes interchanged - and this leads to different structures for the title compounds. The UV-Vis-IR diffuse reflectance spectra show that the optical band gap is about 2.05 eV for Mg2SnS4. IR spectra of the title compounds are also measured and show a wide IR transmission range. First-principle theoretical studies are used to aid the understanding of the electronic structures and linear optical properties.

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