Dipole antennas based on SI-GaAs:Cr for generation and detection of terahertz radiation

Design and technology of fabrication of dipole terahertz radiation emitters and detectors based on semiinsulating GaAs compensated with chromium and having the nonequilibrium charge carrier lifetime of the order of 100 ns are described. Generation and detection of subterahertz radiation in dipole antennas excited by femtosecond laser pulses are experimentally investigated depending on the topology of contact electrodes and the parameters of the active medium.