相关参考文献
注意:仅列出部分参考文献,下载原文获取全部文献信息。Phonon dispersion and Raman spectra of wurtzite InAs under pressure
Shweta D. Dabhi et al.
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS (2015)
Effects of dangling bonds and diameter on the electronic and optical properties of InAs nanowires
E. Gordanian et al.
RSC ADVANCES (2015)
Effect of Diameter Variation on Electrical Characteristics of Schottky Barrier Indium Arsenide Nanowire Field-Effect Transistors
Ali Razavieh et al.
ACS NANO (2014)
Indium arsenide nanowire field-effect transistors for pH and biological sensing
S. Upadhyay et al.
APPLIED PHYSICS LETTERS (2014)
Mechanical properties of individual InAs nanowires studied by tensile tests
X. Li et al.
APPLIED PHYSICS LETTERS (2014)
Catalyst-Free Heteroepitaxial MOCVD Growth of In As Nanowires on Si Substrates
Yi Jing et al.
JOURNAL OF PHYSICAL CHEMISTRY C (2014)
Raman scattering study of InAs nanowires under high pressure
Dipanwita Majumdar et al.
NANOTECHNOLOGY (2014)
Pressure Tuning of the Optical Properties of GaAs Nanowires
Ilaria Zardo et al.
ACS NANO (2012)
Engineering direct-indirect band gap transition in wurtzite GaAs nanowires through size and uniaxial strain
Andrew Copple et al.
APPLIED PHYSICS LETTERS (2012)
Raman sensitivity to crystal structure in InAs nanowires
Jaya Kumar Panda et al.
APPLIED PHYSICS LETTERS (2012)
High-Performance InAs Nanowire MOSFETs
Anil W. Dey et al.
IEEE ELECTRON DEVICE LETTERS (2012)
Uniaxial Stress-Modulated Electronic Properties of a Free-Standing InAs Nanowire
Khairul Alam
IEEE TRANSACTIONS ON ELECTRON DEVICES (2012)
Strain-Induced Performance Improvements in InAs Nanowire Tunnel FETs
F. Conzatti et al.
IEEE TRANSACTIONS ON ELECTRON DEVICES (2012)
Room-Temperature Terahertz Detectors Based on Semiconductor Nanowire Field-Effect Transistors
Miriam S. Vitiello et al.
NANO LETTERS (2012)
Electronics and optoelectronics of two-dimensional transition metal dichalcogenides
Qing Hua Wang et al.
NATURE NANOTECHNOLOGY (2012)
Semiempirical pseudopotential approach for nitride-based nanostructures and ab initio based passivation of free surfaces
A. Molina-Sanchez et al.
PHYSICAL REVIEW B (2012)
RF Characterization of Vertical InAs Nanowire Wrap-Gate Transistors Integrated on Si Substrates
Sofia Johansson et al.
IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES (2011)
Band structure parameters of wurtzite and zinc-blende GaAs under strain in the GW approximation
Tawinan Cheiwchanchamnangij et al.
PHYSICAL REVIEW B (2011)
Surface Effects on the Atomic and Electronic Structure of Unpassivated GaAs Nanowires
Marcello Rosini et al.
ACS NANO (2010)
Parallel Array InAs Nanowire Transistors for Mechanically Bendable, Ultrahigh Frequency Electronics
Toshitake Takahashi et al.
ACS NANO (2010)
Vertical Surrounding Gate Transistors Using Single InAs Nanowires Grown on Si Substrates
Tomotaka Tanaka et al.
APPLIED PHYSICS EXPRESS (2010)
Structural stability and Raman scattering of InN nanowires under high pressure
L. D. Yao et al.
JOURNAL OF MATERIALS RESEARCH (2010)
Diameter dependence of mechanical, electronic, and structural properties of InAs and InP nanowires: A first-principles study
Claudia L. dos Santos et al.
PHYSICAL REVIEW B (2010)
Direct to indirect band gap transition in ultrathin ZnO nanowires under uniaxial compression
Yang Zhang et al.
APPLIED PHYSICS LETTERS (2009)
Structural properties of narrow hexagonal MnAs nanowires: Role of edge atoms
Ali Kazempour et al.
PHYSICAL REVIEW B (2009)
Raman spectroscopy of wurtzite and zinc-blende GaAs nanowires: Polarization dependence, selection rules, and strain effects
I. Zardo et al.
PHYSICAL REVIEW B (2009)
Strain-modulated electronic properties of Ge nanowires: A first-principles study
Paul Logan et al.
PHYSICAL REVIEW B (2009)
Structural characterization of GaAs and InAs nanowires by means of Raman spectroscopy
N. Begum et al.
JOURNAL OF APPLIED PHYSICS (2008)
Size- and strain-dependent electronic structures in H-passivated Si [112] nanowires
Li Huang et al.
JOURNAL OF PHYSICAL CHEMISTRY C (2008)
Colloidal GaAs quantum wires: Solution-liquid-solid synthesis and quantum-confinement studies
Angang Dong et al.
JOURNAL OF THE AMERICAN CHEMICAL SOCIETY (2008)
Functional nanowires
Charles M. Lieber et al.
MRS BULLETIN (2007)
Electron emission from individual indium arsenide semiconductor nanowires
Erwin C. Heeres et al.
NANO LETTERS (2007)
High electron mobility InAs nanowire field-effect transistors
Shadi A. Dayeh et al.
SMALL (2007)
Raman scattering in InAs nanowires synthesized by a solvothermal route
X. X. Xu et al.
APPLIED PHYSICS LETTERS (2006)
Atomistic simulation of nanowires in the sp3d5s* tight-binding formalism:: From boundary conditions to strain calculations
Mathieu Luisier et al.
PHYSICAL REVIEW B (2006)
Nanowire photonics
Peter J. Pauzauskie et al.
MATERIALS TODAY (2006)
Electronic structure of [100]-oriented free-standing InAs and InP nanowires with square and rectangular cross sections
MP Persson et al.
PHYSICAL REVIEW B (2006)
Density-functional study of the mechanical and electronic properties of narrow carbon nanotubes under axial stress -: art. no. 085452
F Bogár et al.
PHYSICAL REVIEW B (2005)
Electronic properties of silicon nanowires
Y Zheng et al.
IEEE TRANSACTIONS ON ELECTRON DEVICES (2005)
Surface passivation method for semiconductor nanostructures
XY Huang et al.
PHYSICAL REVIEW B (2005)
Defect-free InP nanowires grown in [001] direction on InP(001)
U Krishnamachari et al.
APPLIED PHYSICS LETTERS (2004)
Theoretical prediction on aluminum nitride nanotubes
DJ Zhang et al.
CHEMICAL PHYSICS LETTERS (2003)
Tailoring the optical properties of silicon nanowire arrays through strain
DM Lyons et al.
NANO LETTERS (2002)
Strained gallium nitride nanowires
HW Seo et al.
JOURNAL OF CHEMICAL PHYSICS (2002)