期刊
NANOSCIENCE AND NANOTECHNOLOGY LETTERS
卷 7, 期 9, 页码 713-717出版社
AMER SCIENTIFIC PUBLISHERS
DOI: 10.1166/nnl.2015.2021
关键词
NiO; Thin Film; Co; Doping; Gas Sensors
资金
- Basic Science Research Program through National Research Foundation of Korea (NRF) - Ministry of Education [2010-0020163]
Undoped and Co-doped NiO thin films were synthesized via a simple solvothermal route. The undoped NiO thin film sensor exhibited responses of approximately 144-216% to 0.5-10 ppm of NO2 at 250 degrees C. In contrast, the Co-doped NiO thin film sensor showed responses of approximately 206-722% to 0.5-10 ppm of NO2 at 250 degrees C. Therefore, the NO2 gas sensing performance of the NiO thin film sensor was enhanced remarkably by Co doping. Both the undoped and Co-doped NiO thin film sensors showed selectivity for NO2 gas over other gases. The underlying mechanism of the enhanced NO2 gas sensing of NiO thin films by Co-doping can be explained based on a combination of a surface depletion mechanism and a potential barrier-controlled carrier transport mechanism related to the Co3O4-NiO junction as well as a catalytic mechanism.
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