期刊
REVIEW OF SCIENTIFIC INSTRUMENTS
卷 84, 期 2, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.4775718
关键词
-
资金
- Deutsche Forschungsgemeinschaft (DFG) [DFGSCHM1663/4-1]
- Initiative and Networking Fund of the Helmholtz Association [VH-VI-422]
Chua [IEEE Trans. Circuit Theory 18, 507-519 (1971)] predicted rather simple charge-flux curves for active and passive memristors (short for memory resistors) and presented active memristor circuit realizations already in the 1970 s. The first passive memristor has been presented in 2008 [D. B. Strukov, G. S. Snider, and D. R. Williams, Nature (London) 453, 80-83 (2008)]. Typically, memristors are traced in complicated hysteretic current-voltage curves. Therefore, the true essence of many new memristive devices has not been discovered so far. Here, we give a practical guide on how to use normalized charge-flux curves for the prediction of hysteretic current-voltage characteristics of memristors. In the case of memristive BiFeO3 thin film capacitor structures, the normalized charge-flux curves superimpose for different numbers of measurement points N-s and a different measurement time per measurement point T-s. Such normalized charge-flux curves can be used for the prediction of current-voltage characteristics for input signals with arbitrarily chosen N-s and T-s. (C) 2013 American Institute of Physics.[http://dx.doi.org/10.1063/1.4775718]
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据