4.5 Article

Humidity response properties of a potentiometric sensor using LaF3 thin film as the solid electrolyte

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REVIEW OF SCIENTIFIC INSTRUMENTS
卷 82, 期 8, 页码 -

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AMER INST PHYSICS
DOI: 10.1063/1.3617471

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资金

  1. National Programs for High technology Research and Development of China [2009AA04Z330]
  2. New Century Excellent Talents in University [NECT-10-0643]
  3. Natural Science Foundation of China [90923001]

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A thin-film type potentiometric sensor has been prepared by the implementation of electro-beam evaporation, rf magnetron sputtering methods, and micromachining processes. Sn film was deposited on n-Si/SiO2 (400 nm) substrate. A deposited LaF3 film was applied as solid electrolyte and sputtered Pt film was used as the sensing electrode. The patterns of the Pt and LaF3 were realized by the micromachining processes. The LaF3 film was characterized by scanning electron microscopy and energy dispersive x ray. Saturated aqueous solutions were used to achieve controlled humidity environments. When the sensor was exposed to humidity environments, the electromotive force (EMF) of the sensor was examined. It was found that the sensor varies with the relative humidity (RH). The stable response curve was presented and non-Nernst behavior between the average EMF values and RH may be shown. (C) 2011 American Institute of Physics. [doi:10.1063/1.3617471]

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