期刊
REVIEW OF SCIENTIFIC INSTRUMENTS
卷 81, 期 10, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.3493047
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资金
- ANR [SPINJECT-06-BLAN-0253]
Room temperature electronic diffusion is studied in 3 mu m thick epitaxial p(+) GaAs lift-off films using a novel circularly polarized photoluminescence microscope. The method is equivalent to using a standard optical microscope and provides a contactless means to measure both the charge (L) and spin (L(s)) diffusion lengths simultaneously. The measured values of L and L(s) are in excellent agreement with the spatially averaged polarization and a sharp reduction in these two quantities (L from 21.3 to 1.2 mu m and L(s) from 1.3 to 0.8 mu m) is found with increasing surface recombination velocity. Outward diffusion results in a factor of 10 increase in the polarization at the excitation spot. The range of materials to which the technique can be applied, as well as a comparison with other existing methods for the measurement of spin diffusion, is discussed. (C) 2010 American Institute of Physics. [doi:10.1063/1.3493047]
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