期刊
REVIEW OF SCIENTIFIC INSTRUMENTS
卷 81, 期 6, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.3436648
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资金
- U.S. Department of Energy, Office of Science, Division of Materials Sciences and Engineering
- Department of Energy's Office of Biological and Environmental Research
- U.S. Department of Energy [DE-AC05-76RL01830]
- AFOSR [FA9550-07-1-0013]
- NSF [DMR0513968]
- DOE [DE-FG02-07ER46389]
- Division Of Materials Research
- Direct For Mathematical & Physical Scien [0803276] Funding Source: National Science Foundation
The electrical resistivity values for a series of pure and doped (Co, Mn, Al) ZnO epitaxial films grown by pulsed laser deposition were measured with equipment designed for determining the direct current resistivity of high resistance samples. Room-temperature resistances ranging from 7 x 10(1) to 4 x 10(8) Omega/sq were measured on vacuum-reduced cobalt-doped ZnO, (AI,Co) co-doped ZnO, pure cobalt-doped ZnO, Mn-doped ZnO, and undoped ZnO. Using a four-point collinear geometry with gold spring-loaded contacts, resistivities were measured from 295 to 5 K for resistances of < similar to 10(12) Omega/sq. In addition, magnetoresistance and Hall effect were measured as a function of temperature for select samples. Throughout the investigation, samples were also measured on commercially available instrumentation with good agreement. The challenges of transport measurements on high resistivity samples are discussed, along with some offered solutions to those challenges. (C) 2010 American Institute of Physics. [doi:10.1063/1.3436648]
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