期刊
REVIEW OF SCIENTIFIC INSTRUMENTS
卷 80, 期 7, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.3186054
关键词
chromium; EPR spectroscopy; gallium arsenide; III-V semiconductors; microstrip resonators; perturbation techniques; Q-factor
资金
- FAPESP [04/01228-6]
- SPM Brazil network
- CNPq
- HP-Brazil
- CAPES
- IEEE MTT-S
- Fundacao de Amparo a Pesquisa do Estado de Sao Paulo (FAPESP) [04/01228-6] Funding Source: FAPESP
In this article we evaluate the performance of an electron paramagnetic resonance (EPR) setup using a microstrip resonator (MR). The design and characterization of the resonator are described and parameters of importance to EPR and spin manipulation are examined, including cavity quality factor, filling factor, and microwave magnetic field in the sample region. Simulated microwave electric and magnetic field distributions in the resonator are also presented and compared with qualitative measurements of the field distribution obtained by a perturbation technique. Based on EPR experiments carried out with a standard marker at room temperature and a MR resonating at 8.17 GHz, the minimum detectable number of spins was found to be 5x10(10) spins/GHz(1/2) despite the low MR unloaded quality factor Q(0)=60. The functionality of the EPR setup was further evaluated at low temperature, where the spin resonance of Cr dopants present in a GaAs wafer was detected at 2.3 K. The design and characterization of a more versatile MR targeting an improved EPR sensitivity and featuring an integrated biasing circuit for the study of samples that require an electrical contact are also discussed.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据