期刊
REVIEW OF SCIENTIFIC INSTRUMENTS
卷 79, 期 12, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.3030860
关键词
aluminium compounds; electric resistance measurement; gallium arsenide; III-V semiconductors; reflectometers; two-dimensional electron gas
资金
- Australian Research Council [DP0558769]
- Australian Research Council [DP0558769] Funding Source: Australian Research Council
We have embedded an AlGaAs/GaAs based, gated two-dimensional (2D) hole system (2DHS) into an impedance transformer LC circuit and show that by using radio-frequency reflectometry it is possible to perform sensitive, large bandwidth, electrical resistance measurements of 2D systems at millikelvin temperatures. We construct a simple lumped element model where the gated 2DHS is described as a resistive transmission line. The model gives a qualitative understanding of the experimental results. As an example, we use our method to map out the Landau level evolution in a 2DHS as a function of magnetic field and gate voltage.
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