期刊
JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE
卷 15, 期 1, 页码 7-15出版社
IEEK PUBLICATION CENTER
DOI: 10.5573/JSTS.2015.15.1.007
关键词
Graphene; Ge; Si; Schottky barrier height; ideality factor; Schottky barrier inhomogeneities; Gaussian distribution
资金
- Basic Research Laboratory Program through the National Research Foundation - Ministry of Education, Republic of Korea [2011-0027956]
- Converging Research Centre Program through the Ministry of Science, ICT & Future Planning, Republic of Korea [2013K000404]
- R&D Program for Industrial Core Technology - Ministry of Trade, Industry and Energy (MOTIE), Republic of Korea [10045216]
We have investigated electrical properties of graphene/Ge Schottky barrier diode (SBD) fabricated on Ge film epitaxially grown on Si substrate. When decreasing temperature, barrier height decreased and ideality factor increased, implying their strong temperature dependency. From the conventional Richardson plot, Richardson constant was much less than the theoretical value for n-type Ge. Assuming Gaussian distribution of Schottky barrier height with mean Schottky barrier height and standard deviation, Richardson constant extracted from the modified Richardson plot was comparable to the theoretical value for n-type Ge. Thus, the abnormal temperature dependent Schottky behavior of graphene/Ge SBD could be associated with a considerable deviation from the ideal thermionic emission caused by Schottky barrier inhomogeneities.
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