Resistive switching characteristics of Dy2O3 film with a Pt nanocrystal embedding layer formed by pulsed laser deposition

Resistive switching (RS) behaviors of Dy2O3-based memory devices with and without Pt nanocrystals (Pt-nc) layer were investigated for nonvolatile memory applications. The Cu/Pt-nc/Dy2O3/Pt memory exhibits excellent unipolar RS characteristics, including highly uniform switching parameters, lower switching voltage (< 1.2 V), high resistance ratio (> 1 x 10(4)), a large number of switching cycles, as well as long retention time (> 1 x 10(5) s), owing to the local electric field confined and strengthened near the nanocrystals' location.