期刊
ADVANCED ENERGY MATERIALS
卷 5, 期 24, 页码 -出版社
WILEY-V C H VERLAG GMBH
DOI: 10.1002/aenm.201501462
关键词
band gap; energy materials; semiconductors; thin films; ZnSnN2
类别
资金
- National Science Foundation (NSF) [DMR-1410915, DMR-1244887]
- UL by EPSRC [EP/G004447/2]
- NSF [DMR-1409912]
- EPSRC [EP/L000202/1]
- U.S. Department of Energy [DE-AC02-98CH10886]
- Direct For Mathematical & Physical Scien
- Division Of Materials Research [1410915] Funding Source: National Science Foundation
- Division Of Materials Research
- Direct For Mathematical & Physical Scien [1409912] Funding Source: National Science Foundation
- Engineering and Physical Sciences Research Council [EP/L000202/1, EP/G004447/2] Funding Source: researchfish
- EPSRC [EP/G004447/2, EP/L000202/1] Funding Source: UKRI