4.8 Article

Band Gap Dependence on Cation Disorder in ZnSnN2 Solar Absorber

期刊

ADVANCED ENERGY MATERIALS
卷 5, 期 24, 页码 -

出版社

WILEY-V C H VERLAG GMBH
DOI: 10.1002/aenm.201501462

关键词

band gap; energy materials; semiconductors; thin films; ZnSnN2

资金

  1. National Science Foundation (NSF) [DMR-1410915, DMR-1244887]
  2. UL by EPSRC [EP/G004447/2]
  3. NSF [DMR-1409912]
  4. EPSRC [EP/L000202/1]
  5. U.S. Department of Energy [DE-AC02-98CH10886]
  6. Direct For Mathematical & Physical Scien
  7. Division Of Materials Research [1410915] Funding Source: National Science Foundation
  8. Division Of Materials Research
  9. Direct For Mathematical & Physical Scien [1409912] Funding Source: National Science Foundation
  10. Engineering and Physical Sciences Research Council [EP/L000202/1, EP/G004447/2] Funding Source: researchfish
  11. EPSRC [EP/G004447/2, EP/L000202/1] Funding Source: UKRI

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