期刊
ACTA MATERIALIA
卷 99, 期 -, 页码 240-246出版社
PERGAMON-ELSEVIER SCIENCE LTD
DOI: 10.1016/j.actamat.2015.07.035
关键词
Hafnium oxide; Ferroelectric; Domain switching; Temperature dependence; Endurance
资金
- National Natural Science Foundation of China [NSFC 51272034]
- Open Research Fund of State Key Laboratory of Electronic Thin Films and Integrated Devices (UESTC) [KFJJ201101]
- Free State of Saxony (CoolMemory Project)
HfO2-based binary lead-free ferroelectrics show promising properties for non-volatile memory applications, providing that their polarization reversal behavior is fully understood. In this work, temperature-dependent polarization hysteresis measured over a wide applied field range has been investigated for Si-doped HfO2 ferroelectric thin films. Our study indicates that in the low and medium electric field regimes (E < twofold coercive field, 2E(c)), the reversal process is dominated by the thermal activation on domain wall motion and domain nucleation; while in the high-field regime (E > 2E(c)), a non-equilibrium nucleation-limited-switching mechanism dominates the reversal process. The optimum field for ferroelectric random access memory (FeRAM) applications was determined to be around 2.0 MV/cm, which translates into a 2.0 V potential applied across the 10 nm thick films. (C) 2015 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.
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