期刊
PROGRESS IN QUANTUM ELECTRONICS
卷 37, 期 3, 页码 109-184出版社
PERGAMON-ELSEVIER SCIENCE LTD
DOI: 10.1016/j.pquantelec.2013.04.001
关键词
Quantum dots; Semiconductor lasers; Quantum optics
资金
- Sandia's Solid-State Lighting Science Center, an Energy Frontier Research Center (EFRC)
- U.S. Department of Energy, Office of Science, Office of Basic Energy Sciences
- Deutsche Forschungsgemeinschaft
The progression of carrier confinement from quantum wells to quantum dots has received considerable interests because of the potential to improve the semiconductor laser performance at the underlying physics level and to explore quantum optical phenomena in semiconductors. Associated with the transition from quantum wells to quantum dots is a switch from a solid-state-like quasi-continuous density of states to an atom-like system with discrete states. As discussed in this paper, the transition changes the role of the carrier interaction processes that directly influence optical properties. Our goals in this review are two-fold. One is to identify and describe the physics that allows new applications and determines intrinsic limitations for applications in light emitters. We will analyze the use of quantum dots in conventional laser devices and in microcavity emitters, where cavity quantum electrodynamics can alter spontaneous emission and generate nonclassical light for applications in quantum information technologies. A second goal is to promote a new connection between physics and technology. This paper demonstrates how a first-principles theory may be applied to guide important technological decisions by predicting the performances of various active materials under a broad set of experimental conditions. (c) 2013 Elsevier Ltd. All rights reserved.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据