期刊
PROGRESS IN PHOTOVOLTAICS
卷 20, 期 1, 页码 1-5出版社
WILEY
DOI: 10.1002/pip.1129
关键词
thin film; porous silicon; layer transfer; crystalline Si; free standing; kerf-free
We present a both-sides-contacted thin-film crystalline silicon (c-Si) solar cell with a confirmed AM1.5 efficiency of 19.1% using the porous silicon layer transfer process. The aperture area of the cell is 3.98?cm2. This is the highest efficiency ever reported for transferred Si cells. The efficiency improvement over the prior state of the art (16.9%) is achieved by implementing recent developments for Si wafer cells such as surface passivation with aluminum oxide and laser ablation for contacting. The cell has a short-circuit current density of 37.8?mA?cm-2, an open-circuit voltage of 650?mV, and a fill factor of 77.6%. Copyright (c) 2011 John Wiley & Sons, Ltd.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据