期刊
PROGRESS IN PHOTOVOLTAICS
卷 21, 期 1, 页码 30-46出版社
WILEY
DOI: 10.1002/pip.1233
关键词
Cu(In,Ga)Se-2; vacancy compounds; Cu content; Na; solar cells; co-evaporation
资金
- German Federal Ministry of Economics and Technology [50JR0740]
- FP6 Research Training Network GLADNET [MRTN-CT-2006-035459]
- Spectruma Analytik GmbH
In order to transfer the potential for the high efficiencies seen for Cu(In,Ga)Se-2 (CIGSe) thin films from co-evaporation processes to cheaper large-scale deposition techniques, a more intricate understanding of the CIGSe growth process for high-quality material is required. Hence, the growth mechanism for chalcopyrite-type thin films when varying the Cu content during a multi-stage deposition process is studied. Break-off experiments help to understand the intermediate growth stages of the thin-film formation. The film structure and morphology are studied by X-ray diffraction and scanning electron microscopy. The different phases at the film surface are identified by Raman spectroscopy. Depth-resolved compositional analysis is carried out via glow discharge optical emission spectrometry. The experimental results imply an affinity of Na for material phases with a Cu-poor composition, affirming a possible interaction of sodium with Cu vacancies mainly via In(Ga)(Cu) antisite defects. An efficiency of 12.7% for vacancy compound-based devices is obtained. Copyright (C) 2011 John Wiley & Sons, Ltd.
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