期刊
PROGRESS IN PHOTOVOLTAICS
卷 21, 期 4, 页码 595-599出版社
WILEY-BLACKWELL
DOI: 10.1002/pip.1235
关键词
CIGS; solar cell; scanning probes; band profile; grain boundary
资金
- Japan Society for the Promotion of Science
- Special Coordination Funds for Promoting Science and Technology of the Ministry of Education, Culture, Sports, Science, and Technology, Japan
- Grants-in-Aid for Scientific Research [21360143] Funding Source: KAKEN
We performed scanning tunneling spectroscopy on an as-grown Cu(InGa)Se2 (CIGS) thin film and photo-assisted Kelvin probe force microscopy on a CIGS solar cell. From these measurements, we estimated the band profile around the grain boundaries (GBs). The results indicate both downward bending of the conduction band edge and broadening of the band gap near GBs. We can therefore conclude that photo-generated electrons and holes are easily separated by the built-in field near GBs, and consequently their recombination at the GBs should be suppressed. Copyright (c) 2011 John Wiley & Sons, Ltd.
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