期刊
PROGRESS IN PHOTOVOLTAICS
卷 18, 期 3, 页码 155-159出版社
WILEY
DOI: 10.1002/pip.930
关键词
thin-film; III-V; substrate reuse
The epitaxial lift-off (ELO) technique can be used to separate a III-V solar cell structure from its underlying GaAs or Ge substrate. ELO from 4-inch Ge wafers is shown and 2-inch GaAs wafer reuse after lift-off is demonstrated without degradation in performance of the subsequent thin-film GaAs solar cells that were retrieved from it. Since a basic wet chemical smoothing etch procedure appeared insufficient to remove all the surface contamination, wafer re-preparation is done by a chemo-mechanical polishing procedure. Copyright (C) 2010 John Wiley & Sons, Ltd.
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