4.7 Article

UV-nano-imprint lithography technique for the replication of back reflectors for n-i-p thin film silicon solar cells

期刊

PROGRESS IN PHOTOVOLTAICS
卷 19, 期 2, 页码 202-210

出版社

WILEY
DOI: 10.1002/pip.1003

关键词

replication; thin film solar cells; back reflector; UV-NIL

资金

  1. Swiss Federal Office for Energy (OFEN) [101191]
  2. Swiss Commission for Technology and Innovation (CTI) [8809.2]
  3. Swiss National Science Foundation [200021-125177/1]
  4. Swiss National Science Foundation (SNF) [200021_125177] Funding Source: Swiss National Science Foundation (SNF)

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Texturing of interfaces in thin film silicon solar cells is essential to enhance the produced photocurrent and thus the efficiencies. A UV nano-imprint-lithography (UV-NIL) replication process was developed to prepare substrates with textures that are suitable for the growth of n-i-p thin film silicon solar cells. Morphological and optical analyses were performed to assess the quality of the replicas. A comparison of single junction amorphous solar cells on the original structures and on their replicas on glass revealed good light trapping and excellent electrical properties on the replicated structures. A tandem amorphous silicon/amorphous silicon (a-Si/a-Si) cell deposited on a replica on plastic exhibits a stabilized efficiency of 8.1% and a high yield of 90% of good cells in laboratory conditions. It demonstrates the possibility to obtain appropriate structure on low cost plastic substrate. Copyright (C) 2010 John Wiley & Sons, Ltd.

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