期刊
NATURE COMMUNICATIONS
卷 6, 期 -, 页码 -出版社
NATURE PUBLISHING GROUP
DOI: 10.1038/ncomms7647
关键词
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资金
- National Research Foundation, Prime Minister's Office, Singapore under its Competitive Research Programme (CRP) [NRF-CRP9-2011-3]
- SMF-NUS Research Horizons Award-Phase II
- NRF-CRP award 'Novel 2D materials with tailored properties: beyond graphene'
- NSF [CHE-1301157]
- Direct For Mathematical & Physical Scien
- Division Of Chemistry [1301157] Funding Source: National Science Foundation
Ultrathin black phosphorus is a two-dimensional semiconductor with a sizeable band gap. Its excellent electronic properties make it attractive for applications in transistor, logic and optoelectronic devices. However, it is also the first widely investigated two-dimensional material to undergo degradation upon exposure to ambient air. Therefore a passivation method is required to study the intrinsic material properties, understand how oxidation affects the physical properties and enable applications of phosphorene. Here we demonstrate that atomically thin graphene and hexagonal boron nitride can be used for passivation of ultrathin black phosphorus. We report that few-layer pristine black phosphorus channels passivated in an inert gas environment, without any prior exposure to air, exhibit greatly improved n-type charge transport resulting in symmetric electron and hole transconductance characteristics.
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