期刊
ACTA MATERIALIA
卷 98, 期 -, 页码 327-335出版社
PERGAMON-ELSEVIER SCIENCE LTD
DOI: 10.1016/j.actamat.2015.07.047
关键词
Ultrafast laser; Annealing; Al:ZnO; Electrical properties; Laser-induced defects
资金
- ADEM, A green Deal in Energy Materials of the Ministry of Economic Affairs of The Netherlands
Industrial-grade Al:ZnO thin films, were annealed by UV picosecond laser irradiation in argon atmosphere. A remarkable increase of both the carrier density and electron mobility was measured, while the optical properties in the 400-1000 nm range did not change significantly. We studied the microstructure of the films, in order to explain the observed macroscopical changes upon ultra-short pulsed laser annealing. The effects of the ps-laser irradiation are shown to be attributed to the formation of defects and a local atomic rearrangement on the sub-nm scale. This interpretation is rigorously based on the cross-referenced analysis of different experimental techniques (i.e. SEM, AFM, positron annihilation, optical spectroscopy, Hall measurements, Raman spectroscopy, XPS and XRD). The results of this study can be used to develop a new, viable, technological processing technique to further improve Al:ZnO electrodes. (C) 2015 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据