期刊
PROGRESS IN NATURAL SCIENCE-MATERIALS INTERNATIONAL
卷 23, 期 5, 页码 475-480出版社
ELSEVIER SCIENCE INC
DOI: 10.1016/j.pnsc.2013.08.004
关键词
Transparent conducting oxide; Semiconductor; Oxide; Amorphous; Deposition temperature
资金
- U.S. Department of Energy, Office of Science, Office of Basic Energy Sciences [DE-FG02-06ER46320]
- MRSEC program of the National Science Foundation at Northwestern University [DMR-1121262]
- NSF-NSEC
- NSF-MRSEC
- Keck Foundation
- State of Illinois
- Optical Microscopy and Metallography Facility MRSEC program of the National Science Foundation
- Division Of Materials Research
- Direct For Mathematical & Physical Scien [1121262] Funding Source: National Science Foundation
A series of similar to 60 nm thick indium oxide thin-films, all amorphous as determined by x-ray diffraction, were found to have physical and electrical properties that depended on the temperature of deposition. The canier mobility and film conductivity decreased with decreasing deposition temperature; the best electrical properties of high mobility and conductivity were observed at a deposition temperature just below the temperature at which crystalline films formed. The density of the film also decreased with deposition temperature from 7.2 g/cm(3) at +50 degrees C to 5.3 g/cm(3) at 100 degrees C. (C) 2013 Chinese Materials Research Society. Production and hosting by Elsevier B.V. All rights reserved.
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