期刊
NATURE COMMUNICATIONS
卷 6, 期 -, 页码 -出版社
NATURE PUBLISHING GROUP
DOI: 10.1038/ncomms9006
关键词
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资金
- DOE Office of Science Early Career Research Program through Office of Basic Energy Sciences [DE-SC0006414]
- DOE SISGR [DE-FG02-09ER16109]
- Natural Science and Engineering Research Council
- University of Wisconsin Materials Research Science and Engineering Center (MRSEC) [DMR-1121288]
- DOE [DE-FG02-03ER46028]
- Department of Defense (DOD) Air Force Office of Scientific Research through National Defense Science and Engineering Graduate Fellowship [32 CFR 168a]
- 3M Graduate Fellowship
- Center for Nanoscale Materials, a U.S. Department of Energy, Office of Science, Office of Basic Energy Sciences User Facility [DE-AC02-06CH11357]
Graphene can be transformed from a semimetal into a semiconductor if it is confined into nanoribbons narrower than 10nm with controlled crystallographic orientation and well-defined armchair edges. However, the scalable synthesis of nanoribbons with this precision directly on insulating or semiconducting substrates has not been possible. Here we demonstrate the synthesis of graphene nanoribbons on Ge(001) via chemical vapour deposition. The nanoribbons are self-aligning 3 degrees from the Ge < 110 > directions, are self-defining with predominantly smooth armchair edges, and have tunable width to <10 nm and aspect ratio to >70. In order to realize highly anisotropic ribbons, it is critical to operate in a regime in which the growth rate in the width direction is especially slow, <5 nm h(-1). This directional and anisotropic growth enables nanoribbon fabrication directly on conventional semiconductor wafer platforms and, therefore, promises to allow the integration of nanoribbons into future hybrid integrated circuits.
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