期刊
NATURE COMMUNICATIONS
卷 6, 期 -, 页码 -出版社
NATURE PUBLISHING GROUP
DOI: 10.1038/ncomms8809
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资金
- [IBS-R011-D1]
- Ministry of Science, ICT & Future Planning, Republic of Korea [IBS-R011-D1-2015-A00] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
Recent work has demonstrated excellent p-type field-effect switching in exfoliated black phosphorus, but type control has remained elusive. Here, we report unipolar n-type black phosphorus transistors with switching polarity control via contact-metal engineering and flake thickness, combined with oxygen and moisture-free fabrication. With aluminium contacts to black phosphorus, a unipolar to ambipolar transition occurs as flake thickness increases from 3 to 13 nm. The 13-nm aluminium-contacted flake displays graphene-like symmetric hole and electron mobilities up to 950 cm(2)V(-1)s(-1) at 300 K, while a 3 nm flake displays unipolar n-type switching with on/off ratios greater than 10(5) (10(7)) and electron mobility of 275 (630) cm(2)V(-1)s(-1) at 300 K (80 K). For palladium contacts, p-type behaviour dominates in thick flakes, while 2.5-7 nm flakes have symmetric ambipolar transport. These results demonstrate a leap in n-type performance and exemplify the logical switching capabilities of black phosphorus.
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