期刊
PROCEEDINGS OF THE NATIONAL ACADEMY OF SCIENCES OF THE UNITED STATES OF AMERICA
卷 110, 期 26, 页码 10546-10551出版社
NATL ACAD SCIENCES
DOI: 10.1073/pnas.1308853110
关键词
topological states; topological defects; layer-stacking walls; few-layer graphene
资金
- Defense Advanced Research Planning Agency [SPAWAR N66001-11-1-4110]
- Department of Energy, Office of Basic Energy Sciences [DE-FG02-ER45118]
- Welch Foundation [TBF1473]
Electronic states at domain walls in bilayer graphene are studied by analyzing their four-and two-band continuum models, by performing numerical calculations on the lattice, and by using quantum geometric arguments. The continuum theories explain the distinct electronic properties of boundary modes localized near domain walls formed by interlayer electric field reversal, by interlayer stacking reversal, and by simultaneous reversal of both quantities. Boundary mode properties are related to topological transitions and gap closures, which occur in the bulk Hamiltonian parameter space. The important role played by intervalley coupling effects not directly captured by the continuum model is addressed using lattice calculations for specific domain wall structures.
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