期刊
PROCEEDINGS OF THE NATIONAL ACADEMY OF SCIENCES OF THE UNITED STATES OF AMERICA
卷 109, 期 25, 页码 9710-9715出版社
NATL ACAD SCIENCES
DOI: 10.1073/pnas.1117990109
关键词
complex oxide; heterostructure; interface physics; electronic reconstruction; polar discontinuity
资金
- Semiconductor Research Corporation-Nanoelectronics Research Initiative-Western Institute of Nanoelectrics program
- Office of Science, Office of Basic Energy Sciences, Materials Sciences and Engineering Division of the US Department of Energy [DE-AC02-05CH11231]
- Materials Sciences and Engineering Division, Office of Basic Energy Sciences, US Department of Energy
- US Department of Energy [DE-FG02-09ER46554]
- McMinn Endowment
- National Research Foundation of Korea
- Ministry of Education, Science and Technology [2010-0013528]
- Army Research Office [W911NF-10-1-0482]
- National Science Council [099-2811-M-009-003]
The control of material interfaces at the atomic level has led to novel interfacial properties and functionalities. In particular, the study of polar discontinuities at interfaces between complex oxides lies at the frontier of modern condensed matter research. Here we employ a combination of experimental measurements and theoretical calculations to demonstrate the control of a bulk property, namely ferroelectric polarization, of a heteroepitaxial bilayer by precise atomic-scale interface engineering. More specifically, the control is achieved by exploiting the interfacial valence mismatch to influence the electrostatic potential step across the interface, which manifests itself as the biased-voltage in ferroelectric hysteresis loops and determines the ferroelectric state. A broad study of diverse systems comprising different ferroelectrics and conducting perovskite underlayers extends the generality of this phenomenon.
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